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SPP24N60CFD coolmos tm power transistor features ? intrinsic fast-recovery body diode ? extremely low reverse recovery charge ? ultra low gate charge ? extreme d v /d t rated ? high peak current capability ? qualified according to jedec 1) for target applications ? coolmos cfd designed for ? softswitching pwm stages ? lcd & crt tv maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =10a, v dd =50 v 780 mj avalanche energy, repetitive 2),3) e ar i d =20a, v dd =50 v avalanche current, repetitive 2),3) i ar a drain source voltage slope d v /d t i d =21.7a, v ds =480v, t j =125c v/ns reverse diode d v /d t d v /d t v/ns maximum diode commutation speed d i /d t a/s gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 & m3.5 screws 60 ncm 600 20 80 i s =21.7a, v ds =480 v, t j =125c 20 30 240 -55 ... 150 1 40 value 21.7 13.7 55 v ds @ tjmax 650 v r ds(on),max 0.185 ? i d 21.7 a product summary type package marking SPP24N60CFD to-220 24n60cfd pg-to220 type package marking SPP24N60CFD pg-to220 24n60cfd rev. 1.2 page 1 2007-08-28
SPP24N60CFD parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.52 k/w r thja leaded - - 62 soldering temperature, wave soldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =21.7 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =1.2 ma 345 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 2.5 - a v ds =600 v, v gs =0 v, t j =150 c - 2600 - gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =15.4 a, t j =25 c - 0.15 0.185 ? v gs =10 v, i d =15.4 a, t j =150 c - 0.42 - gate resistance r g f =1 mhz, open drain - 0.8 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =15.4 a - 14.0 - s values thermal resistance, junction - ambient rev. 1.2 page 2 2007-08-28
SPP24N60CFD parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 3160 - pf output capacitance c oss - 900 - reverse transfer capacitance c rss -34- effective output capacitance, energy related 4) c o(er) - 103 - effective output capacitance, time related 5) c o(tr) - 188 - turn-on delay time t d(on) -50-ns rise time t r -24- turn-off delay time t d(off) - 100 - fall time t f -9- gate charge characteristics gate to source charge q gs -15-nc gate to drain charge q gd -67- gate charge total q g - 110 143 gate plateau voltage v plateau - 7.3 - v 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 5) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 2) pulse width t p limited by t j,max values v gs =0 v, v ds =25 v, f =1 mhz v dd =400 v, v gs =10 v, i d = 21.7a, r g =6.8 ? v dd =480 v, i d =21.7 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v 1) j-std20 and jesd22 rev. 1.2 page 3 2007-08-28
SPP24N60CFD parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current i s - - 21.7 a diode pulse current 2) i s,pulse --55 diode forward voltage v sd v gs =0 v, i f = i s , t j =25 c - 1.0 1.2 v reverse recovery time t rr - 140 - ns reverse recovery charge q rr - 0.9 - c peak reverse recovery current i rrm -11-a v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values rev. 1.2 page 4 2007-08-28
SPP24N60CFD 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 50 100 150 200 250 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 1.2 page 5 2007-08-28
SPP24N60CFD 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =15.4 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.1 0.2 0.3 0.4 0.5 0.6 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] 25 c 150 c 0 20 40 60 80 0 2 4 6 8 10 12 14 v gs [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25 i d [a] r ds(on) [ ? ] rev. 1.2 page 6 2007-08-28
SPP24N60CFD 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =21.7 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =10 a; v dd =50 v parameter: t j(start) 0 100 200 300 400 500 600 700 800 25 50 75 100 125 150 175 200 t j [c] e as [mj] 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 125 c 25 c 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 4 8 12 16 20 t ar [s] i av [a] 120 v 480 v 0 2 4 6 8 10 0 25 50 75 100 125 q gate [nc] v gs [v] rev. 1.2 page 7 2007-08-28
SPP24N60CFD 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ); i d =10 ma c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy 16 typ. reverse recovery charge e oss = f (v ds )q rr =f( t j );parameter: i d =21.7 a 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] 0 3 6 9 12 15 18 0 100 200 300 400 500 600 v ds [v] e oss [j] 0.8 0.9 1 1.1 1.2 25 50 75 100 125 t j [c] q rr [c] rev. 1.2 page 8 2007-08-28
SPP24N60CFD 17 typ. reverse recovery charge 18 typ. reverse recovery charge q rr =f( i s ); parameter: d i/ d t =100 a/s q rr =f(d i /d t ); parameter: i d =21.7 a 25 c 125 c 0.4 0.6 0.8 1 1.2 5 9 13 17 21 i s [a] q rr [c] 25 c 125 c 0.8 1.2 1.6 2 2.4 100 200 300 400 500 600 d i /d t [a/s] q rr [c] rev. 1.2 page 9 2007-08-28
SPP24N60CFD definition of diode switching characteristics rev. 1.2 page 10 2007-08-28
SPP24N60CFD pg-to-220-3-1; -3-21 dimension in mm/ inches rev. 1.2 page 11 2007-08-28
SPP24N60CFD published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typica values stated herein and/or any information regarding the appli cation of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the type s in question please contact your nearest infineon technologies o ffice . infineon technologies components may only be used in life-suppo rt devices or systems with the expres s written approval of infineon technologies, if a failure of suc h components can reasonably be expected t o cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/o r maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of th e user or other persons may be endangered . rev. 1.2 page 12 2007-08-28

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